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US 4,730,207 AGranted
Non-single-crystal semiconductor light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where m.gtoreq.3) of non-single-crystal semiconductor layers M.sub.1, M.sub.2, . . . and M.sub.m sequentially laminate in this order. The thickness of each M.sub.1, M.sub.2 . . . M.sub.m is 100 .ANG. or less.
Claims2
A non-single-crystal semiconductor light emitting device comprising:
- a non-single-crystal semiconductor region formed by a non-single-crystal semiconductor laminate member made of a plurality m (where m=>3) of non-single-crystal semiconductor layers M.sub.1, M.sub.2, . . . and M.sub.m sequentially laminated in this order, wherein the energy gaps Eg.sub.1, Eg.sub.2 . . . and Eg.sub.m of said non-single-crystal semiconductor layers bear such relationships as Eg.sub.1 >Eg.sub.2 <Eg.sub.3, Eg.sub.3 >Eg.sub.4 <Eg.sub.5, . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg.sub.m, and wherein the energy gaps Eg.sub.2, Eg.sub.4, . . . and Eg.sub.(m-1) are different from one another.
Dependencies are inferred from the claim text.