Hydride deposition of phosporus-containing semiconductor materials avoiding hillock formation
AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorRobert F. Karlicek, Jr.
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Abstract
Hillock formation in the vapor phase epitaxial hydride deposition of indium phosphide is avoided. This effect is accomplished by ensuring that the phosphine utilized in the deposition gas flow is essentially completely decomposed before reaching the deposition area. Additionally, by utilizing the phosphine decomposition procedure, advantageous results are also achieved in the epitaxial hydride deposition of phosphorus-containing semiconductor materials.
Claims8
A process for forming a device comprising the steps of subjecting a substrate in a hydride epitaxy process to a phosphorus-containing vapor, inducing deposition of a phosphorus-containing composition on said substrate through interaction with said vapor, and completing said device characterized in that
- said phosphorus is introduced from a phosphine source wherein at least 93 mole percent of said phosphorus interacting at said substrate is in a form other than phosphine.
Dependencies are inferred from the claim text.