Oxide semiconductor for thermistor
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorTakuoki Hata
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Abstract
This invention relates to an oxide semiconductor for a thermistor to be used as a sensor mostly in the temperature range of 200.degree. C.-700.degree. C. The semiconductor contains four metal elements, that is, Mn in an amount 65.0-98.5 atom %, Ni in an amount of 0.1-5.0 atom %, Cr in an amount of 0.3-5.0 atom % and Zr in an amount of 0.05-25.0 atom %, the total of the four elements being 100 atom %. This oxide semiconductor for a thermistor has outstanding feature for use as a temperature sensor in the medium to high temperature ranges in that the change of resistance with time at temperatures of 200.degree. C.-700.degree. C. is confined within .+-.5%, and thus the semiconductor of this invention is most suited for high-temperature determinations where high reliability is required.
Claims4
An oxide semiconductor for a thermistor to be used as a temperature sensor in the range 300.degree.-700.degree. C., characterized by containing the following four metal elements:
- Mn, Ni, Cr and Zr in amounts of 67.0-83.6 atom %, 0.1-3.0 atom %, 0.3-5.0 atom % and 0.05-16.0 atom %, respectively, the total amount of said four metal elements being 100 atom %.
An oxide semiconductor for a thermistor to be used as a temperature sensor in the range 300.degree.-700.degree. C., characterized by containing the following four metal elements:
- Mn, Ni, Cr and Zr in amounts of 67.0-83.6 atom %, 0.1-3.0 atom %, 0.3-5.0 atoms % and 16.0-25.0 atom %, respectively, the total amount of said four metal elements being 100 atom %, and further containing Si in an amount of 2.0 atom % or less (exclusive of 0 atom %) based on the total amount of said main components.
An oxide semiconductor for a thermistor to be used as a temperature sensor in the range 300.degree.-700.degree. C., characterized by containing the following five metal elements:
- Mn, Ni, Cr, Zn and Zr in amounts of 65.0-98.5 atom %, 0.1-5.0 atom %, 0.3-5.0 atom %, 0.3-5.0 atom % and 0.05-25.0 atom %, respectively, the total amount of said five metal elements being 100 atom %.
An oxide semiconductor for a thermistor, to be used as a temperature sensor in the range 300.degree.-700.degree. C., characterized by containing the following five metal elements:
- Mn, Ni, Cr, Zn and Zr in amounts of 65.0-98.5 atom %, 0.1-5.0 atom %, 0.3-5.0 atom %, 0.3-5.0 atom % and 0.05-25.0 atom %, respectively, the total amount of said five metal elements being 100 atom and further containing Si in an amount of 2.0 atom % or less (exclusive of 0 atom %) based on the total amount of said main components.
Dependencies are inferred from the claim text.