Method of fabricating a light image detector and a linear image detector obtained by this method
AssigneeThomson-CSF
InventorsNicolas Szydlo, Francois Boulitrop
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Abstract
A method of fabricating a light image detector is provided in which there are deposited on a substrate a layer of a conducting material then successively p.sup.+ doped, undoped, n.sup.+ doped, undoped, then p.sup.+ doped semiconductor layers. Then at least one column of material is etched in these layers. The in the column thus obtained, individual detectors are formed solely in the semiconductor layers. The sides of the individual detectors are then irradiated. Finally, line electrodes are deposited in contact with the upper parts of the detectors not covered with an isolating layer.
Claims9
A method of fabricating a light image detector comprising the following successive phases:
- (a) a first phase of depositing on a face of a substrate a first conducting material layer;
- (b) a second phase of depositing a first doped amorphous semiconducting layer of a first given type (p or n) on said first conducting material layer;
- (c) a third phase of depositing a second undoped amorphous semiconducting layer on said first doped amorphous semiconducting layer;
- (d) a fourth phase of depositing a third doped amorphous semiconducting layer of a second given type (n or p) on said second undoped amorphous semiconducting layer;
- (e) a fifth phase of depositing a fourth undoped amorphous semiconducting layer on said third doped amorphous semiconducting layer;
- (f) a sixth phase of depositing a fifth doped amorphous semiconducting layer of the first given type (p or n) on said fourth undoped amorphous semiconducting layer;
- (g) a seventh phase of etching columns in the five previously deposited semiconductor layers, as well as in the first conducting material layer;
- (h) an eighth phase of etching individual conductors in the five semiconductor layers of the preceeding columns;
- (i) a ninth phase of isolating the sides of the individual detectors;
- (j) a tenth phase of depositing a second conducting material layer on the structure remaining after steps 7-9;
- (k) and an eleventh phase of etching in the second conducting material layer electric connections to the individual detectors.
A method of fabricating a light image detector comprising the following successive phases:
- (a) a first phase of depositing on a face of a substrate a first layer of a conducting material layer;
- (b) a second phase of depositing a first doped amorphous semiconducting layer of a first type (p or n) on said first layer of a conducting material;
- (c) a third phase of depositing a second undoped amorphous semiconducting layer on said first doped amorphous semiconducting layer;
- (d) a fourth phase of depositing a third doped amorphous semiconducting layer of a second given type (n or p) on sid second undoped amorphous semiconducting layer;
- (e) a fifth phase of depositing a fourth undoped amorphous semiconducting layer on said third doped amorphous semiconducting layer;
- (f) a sixth phase of etching columns in the five previously deposited semiconducting layers as well as in the first conducting material layer;
- (g) a seventh phase of etching individual detectors and the five semiconductor layers of the preceeding columns;
- (h) an eighth phase of isolating the sides of the individual detectors;
- (i) a ninth phase of depositing a second conducting material layer on the structure remaining after phases 6-8;
- (j) and a tenth phase of etching in the second conducting material layer electric connections to the individual detectors.
A image linear detector comprising, deposited in line on a substrate, several groups of the same number of individual detectors arranged in the same way in each group, of these detectors comprising a first conducting material layer on said substrate, a first doped amorphous semiconducting layer of a first given type (p or n) on said first conducting material layer, a second undoped amorphous semiconducting layer on said first doped amorphous semiconducting layer, a third doped amorphous semiconducting layer of a second given type (n or p) on said second undoped amorphous semiconducting layer, a fourth undoped amorphous semiconducting layer on said third doped amorphous semiconducting layer, a fifth doped amorphous semiconducting layer of a first given type (p or n) on said fourth undoped amorphous semiconducting layer, said first conducting material layer and said first through fifth amorphous semiconducting layers having columns etched therein, the columns having individuals conductors etched therein, the sides of the individual detectors being isolated, a second conducted material layer and electrical connections etched in the second conducting material layer, the layers closest to the substrate of the individual detectors of the same rank being interconnected by a network of conductors deposited on the substrate and the layers furthest away from the individual detectors of the same group being interconnected by a conductor.
Dependencies are inferred from the claim text.