High frequency, wide band, superlinear integrable amplifier and its method of fabrication

A method of fabricating a three-stage integrated circuit comprising the steps of:

• providing a heat dissipation plate E.sub.2 containing thereon a ceramic heat sink;
• fabricating a whole silicon chip containing a plurality of transistors;
• providing a ceramic substrate wherein said ceramic substrate is used for fabricating a ground wire E.sub.1 and a film RLC;
• gluing said ground wire E.sub.1 , said RLC and said ceramic substrate together;
• adhering said glued together ceramic substrate, ground wire film RLC and said silicon chip to said ceramic heat sink A.sub.2 wherein the value of the parasitic capacitance of said integrated circuit and the length of connecting wires utilized is proportional to the thickness of said ground wire and the distance from said ground wire to said silicon chip.

A three stage amplifier network comprising:

• a first transistor stage and a second transistor stage of said three stages having narrow bandwidth response wherein each of said first and second transistor stages have associated therewith a first resistance R.sub.L connected to the respective collectors and a second resistance R.sub.e connected to the respective emitters;
• a third transistor amplifier stage having a bandwidth larger than said two narrow bandwidth transistor stages wherein said larger bandwidth of said third transistor stage is accomplished by at least one RC network;
• wherein the wide bandwidth of said wide bandwidth amplifier stage is such that when the gain curve for said two narrow bandwidth stages passes through the-6 dB point at a first frequency then the peak point of the wide bandwidth of said wide bandwidth stage amplifier section is located at a second frequency which is greater than said first frequency and wherein said wide bandwidth stage utilizes said at least one RC network whereby the resulting curve of said three stages has an approximately flat portion below the zero gain point;
• and
• at least one resistor-inductor-capacitor circuit forming a means for modifying said resulting curve of said three stages wherein said modification resultng from said modifying means network operates on the portion of said resulting curve which has a slope of minus 40dB/10 f and wherein said amplifier network further includes at least one feedback means for adjusting the impedance of said network to a desired value.