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US 4,728,863 AGranted
Apparatus and method for plasma treatment of substrates
OwnerMichael R. Wertheimerinventor
Life of this patent
Estimating the term…
Abstract
An apparatus for substantially uniformly treating a substrate with a microwave plasma consists of a mechanism for simultaneously moving the substrate in two directions relative to the direction of plasma production. In one embodiment, the substrate is simultaneously moved rotationally and translationally. In a second embodiment, the substrate is subjected to planetary motion.
Claims30
An apparatus for treating at least one substrate with a plasma, said apparatus including:
- means for producing said plasma along a first direction;
- said means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- a substrate carrier for carrying said at least one substrate;
- means for imparting rotational motion to said substrate carrier about an axis perpendicular to said direction and in a plane substantially parallel to said direction;
- and
- means for imparting translational motion to said substrate carrier in said plane and in a direction perpendicular to said direction;
- said means for imparting rotational motion being functionally related to said means for imparting translational motion whereby said rotational motion and said translational motion are applied simultaneously to said substrate carrier;
- whereby, said at least one substrate will be substantially uniformly treated by said plasma.
5 more elements
A process for treating at least one substrate with a plasma, said process comprising:
- mounting said at least one substrate on a substrate carrier;
- producing said plasma along a first direction by a means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- rotating said substrate carrier in a plane substantially parallel to said direction;
- and
- simultaneously moving said substrate carrier in a translational manner in said plane and in a direction perpendicular to said direction;
- whereby, to substantially uniformly treat said at least one substrate by said plasma.
3 more elements
An apparatus for treating at least one substrate with a plasma, said apparatus including:
- means for producing said plasma along a first direction;
- said means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- a substrate carrier for carrying said at least one substrate;
- means for imparting motion to said substrate carrier simultaneously in two directions relative to said first direction;
- whereby said at least one substrate will be substantially uniformly treated by said plasma.
2 more elements
An apparatus for treating at least one substrate with a plasma, said apparatus including:
- means for producing said plasma along a first direction;
- said means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second and spaced from said first end, said first direction being the direction from said first end to said second end;
- substrate carrier means for carrying said at least one substrate;
- first means for imparting rotational motion about first axle means to said substrate carrier means in a plane substantially parallel to said direction;
- and
- second means for imparting rotational motion to said first axle means about a second axle;
- said first means for imparting rotational motion being functionally related to said second means for imparting rotational motion whereby said first and second rotational motions are applied simultaneously to said substrate carrier;
- whereby, said substrate exibits planetary motion relative to said first direction so that said at least one substrate will be substantially uniformly treated by said plasma.
5 more elements
A process for treating at least one substrate with a plasma, said process comprising:
- mounting said at least one substrate on a substrate carrier;
- producing said plasma along a first direction by a means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- producing planetary motion of said substrate carrier relative to said direction and in a plane substantially parallel to said direction;
- whereby to substantially uniformly treat said at least one substrate with said plasma.
1 more element
A process as defined in claim -8 and further including the step of controlling the temperature of said substrate carrier.
A process for treating at least one substrate with a plasma, said process comprising:
- mounting said at least one substrate on a substrate carrier;
- producing said plasma along a first direction by a means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- moving said substrate carrier simultaneously in two directions relative to said first direction;
- whereby to substantially uniformly expose said at least one substrate to said plasma.
1 more element
An apparatus for treating at least one substrate with a plasma, said apparatus including:
- means for producing said plasma along a first direction;
- said means for producing said plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- a substrate carrier for carrying said at least one substrate;
- means for providing relative motion, in a plane parallel to said first direction, between said micorwave applicator and said substrate carrier, said motion being compound motion consisting of at least two simultaneously acting components;
- whereby, said at least one substrate will be substantially uniformly treated by said plasma.
2 more elements
A process for treating at least one substrate with a plasma, said process comprising:
- mounting said at least one substrate on a substrate carrier;
- producing said plasma along a first direction by a means for producing plasma comprising a longitudinally extending microwave support structure having an input coupler at a first end thereof and a second end spaced from said first end, said first direction being the direction from said first end to said second end;
- providing relative motion, at a plane parallel to said first direction, between said microwave applicator and said substrate carrier, said motion being compound motion consisting of at least two simultaneously acting components;
- whereby, to substantially uniformly treat said at least one substrate by said plasma.
1 more element
Dependencies are inferred from the claim text.