US 4,728,620 A · Process for the production of a MIS-type integrated circuit

Abstract

A process for the production of a MIS-type integrated circuit is disclosed. In order to form an integrated circuit having reciprocally electrically insulated active components in which the gates of the components do not extend above the electrical insulations used for the reciprocal insulation of the components, the process consists of covering a semiconductor substrate (30) with a first layer (32) of insulating material, depositing on the first layer (32) of insulating material a second layer including a semiconductor or conductor material in which will be formed the gates (34a) of the active components, formulation of the field oxide (46a) of the circuit used for electrically insulating the active components from one another, production of the gates (34a) of the active components, production of the sources and drains of the components by a doping of the substrate, the doping having a reverse conductivity to that of the substrate (3), formation of insulating edges (58a) on the edges of the gates (34a) of the components, production of electrical contact holes of the circuit, and production of connections of the circuit.

Claims49

Dependent claims

Process for the production, on a semiconductor substrate, of an integrated circuit having reciprocally electrically insulated active components in which gates of said components do not extend above electrical insulations used for the reciprocal insulation of said components, said process comprising, in sequence, the following steps:

(a) covering said semiconductor substrate with a first layer of insulating material in which gate insulatings will be formed,
(b) depositing on the first layer of insulating material a second layer including a semiconductor or conductor material in which will be formed said gates of said active components,
(c) forming a field oxide of the circuit used for electrically insulating said active components from one another,
(d) producing said gates of said active components in said second layer,
(e) producing active zones of said components by a doping of the substrate, said doping having an opposite conductivity to that of the substrate,
(f) forming insulating edges on the edges of said gates of said components,
(g) producing electrical contact holes of the circuit, and
(h) producing connections of the circuit.

5 more elements

Process for the production, on a semiconductor substrate, of an integrated circuit having active components which are electrically insulated from one another in which gates of said components do not extend above electrical insulations used for insulating said components from one another, comprising, in sequence, the following steps:

(a) producing a field oxide of the circuit used for electrically insulating said active components from one another,
(b) covering said semiconductor substrate and said field oxide with a first layer of an insulating material in which will be formed gate insulatings,
(c) depositing on the complete structure a second layer of a semiconductor or conductor material in which will be formed said gates of said active components,
(d) etching said second layer of semiconductor or conductor material so as to expose said field oxide,
(e) producing said gates of said active components in said second layer,
(f) producing active zones of said components by a doping of said semiconductor substrate, said doping having an opposite conductivity to that of said semiconductor substrate,
(g) producing insulating edges on the edges of said gates of the components,
(h) producing electrical contact holes of the circuit, and
(i) producing connections of the circuit.

6 more elements

Dependencies are inferred from the claim text.

Process for the production of a MIS-type integrated circuit

Life of this patent

Process for the production of a MIS-type integrated circuit

Life of this patent

Abstract

Claims49