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US 4,728,615 AGranted
Method for producing thin-film photoelectric transducer
AssigneesFuji Electric Co., Ltd., Fuji Electric Corporate Research and Development Ltd.
InventorsYoshiyuki Uchida, Masaharu Nishiura, Toshio Hama
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Abstract
An apparatus and method for producing a thin-film photoelectric transducer. The transducer has a transparent substrate, an amorphous silicon layer and a metal layer; the apparatus has a processing laser for patterning each of the layers. In addition, a separate visible laser is used to detect defects in the layers and the processor laser is then used to correct the defects.
Claims7
A method for manufacturing thinfilm photoelectric transducers, comprising:
- positioning a piece of transparent substrate material on a support table mounted for movement in two directions, which are substantially at right angles;
- forming a transparent conductive film on a surface of said substrate;
- operating a Nd:YAG laser along the outer surface of said film to pattern it;
- subsequently depositing an a-Si layer on said film and scribing said layer with the Nd:YAG laser;
- forming a metal layer on the outer surface of the a-Si layer and scribing the metal layer with the Nd:YAG laser;
- applying a reverse bias to the then-formed transducer and measuring the leakage current to detect any defective transducer;
- moving the table and scanning the surface of any defective transducer through the transparent substrate with a visible light laser to locate each defect;
- and
- operating the Nd:YAG laser over each defect to eliminate that defect.
6 more elements
Dependencies are inferred from the claim text.