Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures

A nanosubstrate for the production of patterns and structures on a nanometer scale comprising:

• a substrate base;
• a plurality of projections disposed in a pattern on said base, said pattern having a characteristic dimension of 1-50 nanometers and corresponding to a two-dimensional spatial pattern of at least one of thickness, density and chemical reactivity variations in a self-assembled two-dimensional array;
• and
• a layer of material disposed on said base and between said projections, said material of said layer being different than material of said projections, said material not forming said pattern naturally.

A nanosubstrate for the production of patterns on a nanometer scale comprising:

• a substrate base;
• a self-assembled two-dimensional array overlying said substrate base, said two-dimensional array forming a two-dimensional spatial pattern of at least one of thickness, density and chemical reactivity variations, said pattern having a characteristic dimension of 1-50 nanometers;
• and
• means for determining the state of selected portions of said array.

A nanosubstrate for the production of patterns on a nanometer scale comprising:

• a substrate base;
• a self-assembled two-dimensional array overlying said substrate base, said two-dimensional array forming a two-dimensional spatial pattern of holes, said pattern having a characteristic dimension of 1-50 nanometers;
• and
• a patterned layer disposed on said array, and substantially not on said substrate base and having a pattern of holes which is determined by said spatial pattern of said array.

A nanosubstrate for the production of patterns on a nanometer scale comprising:

• a substrate base;
• a self-assembled two-dimensional array overlying said substrate base, said two-dimensional array forming a two-dimensional spatial pattern of at least one of thickness, density and chemical reactivity variations, said pattern having a characteristic dimension of 1-50 nanometers;
• and
• a patterned layer disposed on said array, and having a pattern of holes which is determined by said spatial pattern of said array.