Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet
AssigneeCommissariat a l'Energie Atomique
InventorsThierry Capra, Philippe Gerard
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Abstract
Process for producing a ferrimagnetic garnet layer having a high magnetic anisotropy on an amagnetic substrate, wherein it comprises the stages of forming at least one ferrimagnetic garnet layer by epitaxy from the amagnetic substrate, high dose ion implantation in the ferrimagnetic garnet layer in order to produce defects therein and heating the entity in the presence of a reducing agent to a temperature between 250.degree. and 450.degree. C. Application to the production of bubble stores with non-implanted propagation patterns.
Claims11
A process for producing a ferrimagnetic garnet layer, which has a high magnetic anisotropy, on an amagnetic substrate, comprising the steps of:
- forming at least one ferrimagnetic garnet layer by epitaxial growth on said amagnetic substrate;
- implanting a high dose of ions derived from a gaseous element in said ferrimagnetic garnet layer which does not make the implanted portion of the ferrimagnetic layer amorphous, in order to produce defects within the garnet layer;
- and
- heating the entity in the presence of a reducing agent to a temperature ranging from 250.degree. to 292.degree. C.
A process for producing a ferrimagnetic garnet layer which has a high planar magnetic anisotropy on an amagnetic substrate, which process is applied to the production of a bubble store with non-implanted propagation patterns, comprising the steps of:
- forming a ferrimagnetic garnet layer by epitaxial growth on said amagnetic substrate;
- implanting a high dose of ions derived from a gaseous elements in the upper portion of said ferrimagnetic garnet layer which portion is not rendered amorphous by said implantation, in order to produce defects in said portion and to form the propagation patterns desired;
- and
- heating the entity in the presence of a reducing agent to a temperature between 250.degree. and 292.degree. C.
Dependencies are inferred from the claim text.