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US 4,707,724 AGranted
Semiconductor device and method of manufacturing thereof
AssigneeHitachi, Ltd.
InventorsAkira Suzuki, Hideki Tanaka, Gen Murakami
Life of this patent
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AssigneeHitachi, Ltd.
InventorsAkira Suzuki, Hideki Tanaka, Gen Murakami
Estimating the term…
A nickel-alloy layer is formed on a lead frame made of a material which consists chiefly of copper as a base material, a pellet is then mounted, and a resin is applied thereto to form a package. Then, a copper layer or an alloy layer of copper and 0.05 to 0.2% by weight of zinc is formed on said nickel-containing alloy layer of the external lead portions. A solder layer is then formed on the copper layer or on the zinc-copper alloy layer that is formed on the external lead portions. With the thus formed semiconductor device, the resin exhibits increased adhesiveness relative to the tab and lead frame in the package. Therefore, peeling is prevented from occurring on the interface between the resin and the tab or lead frame. Further, no brittle intermetallic compound is formed by the heating in the metal layer such as the solder layer on the external lead portions. Accordingly, the metal layer is effectively prevented from peeling off.
In a semiconductor device comprising a pellet in which is formed a semiconductor integrated circuit with semiconductor elements as main elements, a plurality of leads that are electrically connected to a plurality of bonding pads of said pellet via fine metal wires, and a resinous sealing body which seals said pellet, said fine metal wires, and portions of said plurality of leads to which said fine metal wires are connected, the improvement wherein a base member of each of said leads is a copper alloy consisting chiefly of copper, an alloy layer consisting of nickel and tin or iron is formed on the whole surface of the base member of each of said leads, a metal plated layer consisting chiefly of copper is formed on portions of the leads exposed from said resinous sealing body, and a solder layer is formed on surfaces of the metal plated layer on the leads exposed from said resinous sealing body.
A method of manufacturing semiconductor devices comprising:
In a semiconductor device comprising a pellet in which a semiconductor integrated circuit with semiconductor elements as main elements is formed, a plurality of leads that are electrically connected to a plurality of bonding pads of said pellet via fine metal wires, and a resinous sealing body which seals said pellet, said fine metal wires, and portions of said plurality of leads to which said fine metal wires are connected, the improvement wherein a base member of each of said leads is a copper alloy consisting chiefly of copper, an alloy layer composed of a tin-nickel alloy layer or iron-nickel alloy layer is formed on the substantially whole surface of the base member of each of said leads, a metal plated layer consisting chiefly of copper is formed on portions of the leads exposed from said resinous sealing body, and a solder layer is formed on surfaces of the metal plated layer on the leads exposed from said resinous sealing body.
Dependencies are inferred from the claim text.