ISFET-based measuring device and method for correcting drift
AssigneeSentron v.o.f.
InventorsHendrikus C. G. Ligtenberg, Jozef G. M. Leuveld
Life of this patent
Estimating the term…
Loading patent…
AssigneeSentron v.o.f.
InventorsHendrikus C. G. Ligtenberg, Jozef G. M. Leuveld
Estimating the term…
The measuring device (10) comprises an ISFET (12) used as a chemically selective ion sensor, a reference electrode (20) positioned adjacent the ISFET (12), an amplifier (22) coupled to the ISFET and control/correction circuitry (30) coupled to the ISFET (12), to the reference electrode (20) and to the amplifier (22). The control/correction circuitry (30) is operable to maintain the drain-source current I.sub.DS of the ISFET (12) at a constant value and to correct drift effects of the ISFET (12) on the basis of the logarithmic equation: .DELTA.V.sub.p =A 1n(t/t.sub.o +1 ) where: .DELTA.V.sub.p =potential drift A=scale factor for drift and amplitude t.sub.o =time constant defining the dependence on time t=time during which the sensor is operative in the event of continuous operation.
A measuring device comprising an ISFET having a drain and a source used as a chemically selective ion sensor, a reference electrode positioned adjacent said ISFET, an amplifier coupled to said ISFET, control circuit means including a clock signal generator coupled to said ISFET, to said reference electrode and to said amplifier:
A method for correcting drift effects of an ISFET in a measuring device comprising an ISFET used as a chemically selective ion sensor, a reference electrode, an amplifier and control circuit means including a clock signal generator for timing, with clock signals, time periods of operation of the device and for maintaining two of three operating parameters of said ISFET constant while adjusting the third parameter, the parameters being V.sub.DS, I.sub.DS and V.sub.RS, said controlling of the three parameters including:
Dependencies are inferred from the claim text.