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US 4,697,115 AGranted
Surface acoustic wave device
AssigneeClarion Co., Ltd.
InventorSyuichi Mitsutsuka
Life of this patent
Estimating the term…
Abstract
A surface acoustic wave device includes a semiconductor substrate, a piezoelectric film disposed on the semiconductor substrate, at least one pair of comb-shaped electrodes constituting an input transducer, and an output transducer a plurality of surface acoustic wave filters having different bands, which include a plurality of metal electrodes, so disposed that each of them is located between the input and output comb-shaped electrodes of each of the surface acoustic wave filters, a bias voltage applying arrangement for applying bias voltages to each of the metal electrodes; and a bias voltage regulating arrangement for regulating the bias voltages.
Claims5
A surface acoustic wave device, comprising:
- a semiconductor substrate;
- a piezoelectric film disposed on said semiconductor substrate;
- an input transducer and an output transducer disposed at two locations on said piezoelectric film;
- a plurality of metal electrodes disposed between said input transducer and said output transducer;
- bias voltage applying means for applying a respective bias voltage to each of said metal electrodes;
- and
- bias voltage regulating means for regulating said bias voltages;
- wherein an insulating film is provided between said semiconductor substrate and said piezoelectric film;
- and
- wherein a metal film is disposed between said metal electrodes and said output transducer on said insulating film.
7 more elements
A surface acoustic wave device, comprising:
- a semiconductor substrate;
- a piezoelectric film disposed on said semiconductor substrate;
- an input transducer and an output transducer disposed at two locations on said piezoelectric film;
- a plurality of metal electrodes disposed between said input transducer and said output transducer;
- bias voltage applying means for applying a respective bias voltage to each of said metal electrodes;
- and
- bias voltage regulating means for regulating said bias voltages;
- wherein an insulating film is provided between said semiconductor substrate and said piezoelectric film;
- and
- wherein said piezoelectric film is omitted in a region between said metal electrodes and said output transducer.
7 more elements
A surface acoustic wave device comprising:
- a semiconductor substrate;
- a piezoelectric film provided on said semiconductor substrate;
- an input transducer and an output transducer provided at spaced locations on said piezoelectric film, wherein a surface acoustic wave travelling through said piezoelectric film from said input transducer to said output transducer has respective portions which travel along respective paths of travel;
- a plurality of elongate metal electrodes provided on said piezoelectric film between said input transducer and said output transducer, each said metal electrode being positioned along a respective said surface acoustic wave path of travel so as to extend parallel thereto;
- bias voltage applying means for applying to each of said metal electrodes a respective bias voltage;
- and
- bias voltage regulating means for regulating said bias voltages so as to control the propagation losses of surface acoustic waves traveling past said metal electrodes along said paths of travel;
- wherein an end surface of each of said metal electrodes is inclined with respect to the direction of propagation of surface acoustic waves along the associated path of travel.
5 more elements
A surface acoustic wave device comprising:
- a semiconductor substrate;
- a piezoelectric film provided on said semiconductor substrate;
- an input transducer and an output transducer provided at spaced locations on said piezoelectric film, wherein a surface acoustic wave travelling through said piezoelectric film from said input transducer to said output transducer has respective portions which travel along respective paths of travel;
- a plurality of elongate metal electrodes provided on said piezoelectric film between said input transducer and said output transducer, each said metal electrode being positioned along a respective said surface acoustic wave path of travel so as to extend parallel thereto;
- bias voltage applying means for applying to each of said metal electrodes a respective bias voltage;
- bias voltage regulating means for regulating said bias voltages so as to control the propagation losses of surface acoustic waves traveling past said metal electrodes along said paths of travel;
- an insulating film provided between said semiconductor substrate and said piezoelectric film;
- and
- a metal film disposed on said insulating film between said metal electrodes and said output transducer.
6 more elements
A surface acoustic wave device comprising:
- a semiconductor substrate;
- a piezoelectric film provided on said semiconductor substrate;
- an input transducer and an output transducer provided at spaced locations on said piezoelectric film, wherein a surface acoustic wave travelling through said piezoelectric film from said input transducer to said output transducer has respective portions which travel along respective paths of travel;
- a plurality of elongate metal electrodes provided on said piezoelectric film between said input transducer and said output transducer, each said metal electrode being positioned along a respective said surface acoustic wave path of travel so as to extend parallel thereto;
- bias voltage applying means for applying to each of said metal electrodes a respective bias voltage;
- bias voltage regulating means for regulating said bias voltages so as to control the propagation losses of surface acoustic waves traveling past said metal electrodes along said paths of travel;
- and
- an insulating film provided between said semiconductor substrate and said piezoelectric film;
- wherein said semiconductor substrate is free of said piezoelectric film in a region between said metal electrodes and said output transducer.
6 more elements
Dependencies are inferred from the claim text.