Process and apparatus for forming thin films
AssigneeAmetek, Inc.
InventorsMitchell E. Doty, Thom V. Bernitsky
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Abstract
Process and apparatus are disclosed for forming excellent quality, large area thin films essentially without discontinuities and inhomogenuities, particularly for photovoltaic solar cells. The reactants are conducted past a heated substrate in a relatively thin gap, e.g., 0.030 inch, in a turbulent flow. In a specific embodiment, the reactants are contained in nebuli of an atomized solution, and the nebuli are sorted, preferably by gravity, prior to introduction thereof into the gap to prevent introduction of larger size nebuli into the reaction gap.
Claims11
A method of forming a thin film on a substrate comprising the steps of conducting one or more reactants in gaseous or atomized nebuli form from which the film is to be formed in a turbulent flow past the substrate in a contacting relationship therewith through a reaction gap having a thickness of less than about 0.1 inch, heating the substrate to above a predetermined temperature which is greater than the minimum temperature at which substantially no deposition takes place on the substrate after contacting the substrate with the one or more reactants for approximately 20 minutes, and controlling the temperature of the heated substrate.
A method of forming a thin film on a substrate comprising the steps of positioning the substrate in a reaction chamber such that a reaction gap having a thickness of less than about 0.1 inch is formed between the surface of the substrate on which the film is to be formed and an opposed surface in the reaction chamber, conducting one or more reactants in gaseous or atomized nebuli form from which the film is to be formed in a turbulent flow past the substrate in a contacting relationship therewith through the reaction gap, heating the substrate to above a predetermined temperature which is greater than the minimum temperature at which substantially no deposition takes place on the substrate after contacting the substrate with the one or more reactants for approximately 20 minutes, and controlling the temperature of the heated substrate.
Dependencies are inferred from the claim text.