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US 4,684,829 AGranted
CMOS tree decoder with speed enhancement by adjustment of gate width
AssigneeSharp Kabushiki Kaisha
InventorMunehiro Uratani
Life of this patent
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Abstract
A semi-conductor decoder circuit includes 2.sup.N-1 circuits each formed of transistors vertically arranged in N stages, with the transistors of 2.sup.N-1, 2.sup.N-2 . . . 2.sup.1, 2.sup.0 number being disposed sequentially from the output stage in N stages in a tree structure. The gate width of the transistor at each stage is expanded as a distance from the output stage is increased so as to prevent an increase in ON resistance of the circuit and also to achieve a high speed operation.
Claims4
A semiconductor decoder circuit comprising:
- 2.sup.N-1 number of NAND gate means, each having N inputs and collectively developing an output, where N is greater than 2, each said NAND gate means including;
- N first transistors, each having a control terminal coupled to receive one of said N inputs and first and second controlled terminals, said first controlled terminals being commonly connected together to said output, said second controlled terminals coupled to receive a supply voltage;
- and
- a unique path of at least N-1 second transistors, said second transistors each having an input gate coupled to receive one of said N inputs and third and fourth controlled terminals, said N-1 second transistors in said unique path being serially connected together by their respective third and fourth terminals to form N-1 stages between said commonly connected first controlled terminals and a reference node;
- said unique path between each of said 2.sup.N-1 number of NAND gate means and said reference node sharing at least some of said N-1 second transistors with the unique path of others of said NAND gate means,
- said N-1 second transistors of all of said 2.sup.N-1 number of NAND gate means being connected in a cascade arrangement with said said unique paths intersecting to connect the N first transistors of each of said 2.sup.N-1 number of NAND gate means to said reference node at a single point;
- each gate of one of said N-1 second transistors in the N-1 stage having a gate width inversely proportional to the number of transistors in said N-1 stage to thereby make the total gate width of all of said second transistors at each said stage substantially constant.
4 more elements
Dependencies are inferred from the claim text.