Back to results
US 4,671,846 AGranted
Method of bonding crystalline silicon bodies
AssigneeKabushiki Kaisha Toshiba
InventorsMasaru Shimbo, Kiyoshi Fukuda
Life of this patent
Estimating the term…
Abstract
A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.
Claims8
A method of bonding two single-crystal silicon bodies together at a temperature of below 300.degree. C. without fusing of the bodies or application of an electrical field thereto comprising the steps of:
- mirror-polishing surfaces of the bodies to reduce the surface roughness to 500 A or less;
- cleaning the mirror-polished surfaces with liquid cleaning agents to remove organic and inorganic contaminant therefrom;
- drying the surfaces to remove residual cleaning agent, thereby producing clean surfaces, while maintaining the surface roughness of such surfaces at 500 A or less bringing the clean surfaces having a surface roughness of 500 A or less together at a temperature of below 300.degree. C. to acheive mutual contact while insuring that substantially foreign substance enters the gap between these surfaces, to thereby bond the two single-crystal bodies together.
Dependencies are inferred from the claim text.