US 4,670,768 AGranted

Complementary MOS integrated circuits having vertical channel FETs

AssigneeHitachi, Ltd.

InventorsHideo Sunami, Makoto Ohkura, Shinichiro Kimura

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Abstract

A semiconductor integrated circuit comprising semiconductor regions in the form of first and second protruding poles that are provided on a semiconductor layer formed on a semiconductor substrate or an insulating substrate, and that are opposed to each other with an insulating region sandwiched therebetween, a p-channel FET provided in the first semiconductor region, and an n-channel FET provided in the second semiconductor region. These FET's have source and drain regions on the upper and bottom portions of the semiconductor regions, and have gate electrodes on the sides of the semiconductor regions. The insulation region between the protruding pole-like semiconductor regions is further utilized as the gate electrode and the gate insulating film.

Claims5

Dependent claims

A semiconductor integrated circuit comprising:

a substrate having a semiconductor layer on at least a first main surface thereof;
a first region of a first type of conductivity formed in said semiconductor layer;
a second region of a second type of conductivity formed in said semiconductor layer;
a first semiconductor protruding a pole-like region of the second type of conductivity that is so provided as to come into contact, with at least a portion thereof, with said first region, and a second semiconductor protruding pole-like region of the first type of conductivity that is so provided as to come into contact, with at least a portion thereof, with said second region, wherein said first and second protruding pole-like regions are provided as a mesa;
a first isolation region provided between said first semiconductor protruding pole-like region and said second semiconductor protruding pole-like region;
a third region of the first type of conductivity provided in said first semiconductor protruding pole-like region;
a fourth region of the second type of conductivity provided in said second semiconductor protruding pole-like region;
a first gate electrode formed on said first semiconductor protruding pole-like region via a first gate insulating film opposite to the first isolation region;
and
a second gate electrode formed on said second semiconductor protruding pole-like region via a second gate insulating film opposite to the first isolation region.

7 more elements

Dependencies are inferred from the claim text.