Process for the growth of structures based on group IV semiconductor materials
AssigneesAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorHarry J. Leamy
Life of this patent
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Abstract
Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal substrate a layer of an insulating material, such as a silicon oxide. A small via hole is produced in the insulating layer to leave a portion of the underlying substrate uncovered. A precursor material is deposited on the insulating layer so that it covers at least a portion of the insulating layer and also contacts the substrate at the via hole. The precursor layer is then formed into a single crystal by inducing growth on the substrate at the via hole and propagating this growth through the precursor layer.
Claims13
A process for forming a single crystal region of a semiconductor material on a region of insulating material of a composite structure, said structure having a surface including a section of said insulating material and a section of single crystal material comprising the steps of forming said single crystal region of a semiconductor material so that it contacts said section of single crystal material of said composite structure wherein said semiconductor material comprises a Group IV element and said single crystal region of semiconductor material is produced by the procedure comprising the steps of forming a precursor region that interfaces with said single crystal material of said composite structure, initiating growth of said single crystal region of semiconductor material at the interface of said precursor region with said single crystal material of said composite structure, and propagating said growth into said precursor region continuously from said interface by producing a chemical potential gradient in said precursor region to complete said single crystal region in the absence of polycrystalline propagation initiated from a polycrystalline region wherein said polycrystalline propagation under the conditions of said chemical potential gradient limits said propagation from said interface, whereby said single crystal region overlies at least a portion of said insulating material and whereby said single crystal region is suitable for use in producing electronic devices.
Dependencies are inferred from the claim text.