Apparatus and method for manufacturing planarized aluminum films
AssigneeVarian Associates, Inc.
InventorDonald M. Mintz
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Abstract
An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.
Claims11
An apparatus for forming a planarized aluminum layer on a semiconductor wafer comprising:
- deposition means for forming a refractory metal silicide layer over the wafer;
- sputter means for forming an aluminum layer by sputter deposition over the refractory metal silicide layer including;
- means for heating the wafer to temperatures above 400.degree. C. from behind while sputtering;
- magnetic mirror means located behind the workpiece for moving a plasma away from the wafer;
- and
- means for positioning the wafer before said deposition means and said sputter means in sequence without exposing the wafer to oxygen-bearing gas.
A method of sputter depositing a planar aluminum layer on an oxygen-bearing layer on a semiconductor wafer comprising the step of depositing a refractory metal silicide layer on the oxygen-bearing layer and then sputtering an aluminum layer on said refractory metal silicide layer without exposing said refractory metal silicide to oxygen-bearing gas, the sputtering of aluminum being done while applying an R.F. bias to the wafer and a magnetic field vertical to the center of the wafer in a polarity which moves plasma away from the wafer.
Dependencies are inferred from the claim text.