Circuit substrate having high thermal conductivity
AssigneeKabushiki Kaisha Toshiba
InventorsNobuo Iwase, Kazuo Anzai, Kazuo Shinozaki, Akihiko Tsuge, Kazutaka Saitoh, Kiyoshi Iyogi, Noboru Sato, Mitsuo Kasori
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Abstract
A high thermal conductivity circuit substrate is provided comprising a sintered aluminum nitride ceramic substrate consisting essentially of one member selected from the group of yttrium, the rare earth metals and the alkali earth metals and an electrically conductive thick film paste for a conductive layer formed on the substrate.
Claims25
A high thermal conductivity circuit substrate, comprising (a) a sintered aluminum nitride ceramic substrate consisting essentially of at least one member selected from the group consisting of an oxide of yttrium, an oxide of a rare earth metal and an oxide of an alkali earth metal, said member present in an amount of from about 0.01% to about 15% of metal equivalent by weight, the balance being essentially aluminum nitride and incidental impurities and (b) a conductive path or layer made from electrically conductive thick film paste formed on said ceramic substrate;
- wherein the bond strength between said circuit substrate and said conductive path or layer is at least about 1 kg/mm.sup.2.
A high thermal conductivity circuit substrate, comprising (a) a sintered aluminum nitride ceramic substrate consisting essentially of at least one member selected from the group consisting of an oxide of yttrium, an oxide of a rare earth metal and an oxide of an alkali earth metal, said member present in an amount of from about 0.01% to about 5% metal equivalent by weight, the balance being essentially aluminum nitride and incidental impurities and (b) a conductive path or layer made from electrically conductive thick film paste formed on said ceramic substrate;
- wherein the bond strength between said circuit substrate and said conductive path or layer is at least about 1 kg/mm.sup.2.
Dependencies are inferred from the claim text.