In-situ CVD chamber cleaner

A chemical vapor deposition chamber cleaning system for the in-situ cleaning of either LPCVD tube chambers where said LPCVD tube is situated in a furnace that utilizes electrical heating elements for heating said LPCVD tube and where the heating elements of said furnace are situated about the exterior of said LPCVD tube, or RPE bell jar chambers where said RPE bell jar is situated in the interior of a cylindrical bank of quartz lamps having metallic reflectors utilized to radiantly heat a susceptor situated in the interior of said RPE bell jar, or RPE bell jar chambers where said RPE bell jar is circumferentially wrapped by radio frequency induction coils used to heat a susceptor situated in the interior of said RPE bell jar by radio frequency induction, comprising:

• a base member formed to create a vacuum seal upon engagement with the loading end of said chamber;
• at least one powered electrode formed to protrude from said base member into said chamber and to extend substantially throughout the length of said chamber;
• a means for introducing a plasma forming gas into said chamber;
• a means to evacuate said chamber such that a plasma can be created within said chamber;
• a first electrical network formed to connect as a grounded electrode said heating elements, or said metallic quartz lamp reflectors, or said RF induction coils;
• a second electrical network formed to create a radio frequency electric field between said powered electrode and said grounded electrode, whereby a plasma is created in said chamber by the interaction of said gas and said RF field, said plasma acting to etch unwanted deposits from the inner wall of said chamber.

A chemical vapor deposition chamber cleaning system for the in-situ cleaning of LPCVD tube chambers or RPS bell jar chambers comprising:

• a base member formed to create a vacuum seal upon engagement with the loading end of said chamber;
• at least one powered electrode formed to protrude into said chamber;
• at least one grounded electrode formed to protrude into said chamber;
• a means for introducing a plasma forming gas into said chamber;
• a means to evacuate said chamber such that a plasma can be created within said chamber;
• an electrical network formed to create a radio frequency electrical field between said powered electrode and said grounded electrode, whereby a plasma is created in said chamber by the interaction of said gas and said RF field, said plasma acting to etch unwanted deposits from the inner wall of said chamber;
• wherein said powered electrode and said grounded electrode are co-axially such that said grounded electrode is formed as a hollow tube and said powered electrode extends co-axially through the center of said grounded electrode tube;
• said grounded electrode terminating within said chamber in a radially extending grounded electrode plate and said powered electrode terminating within said chamber in a radially extending powered electrode plate whereby said electric field is primarily created between said grounded plate and said powered plate;
• said means for introducing said gas including a hollow quartz glass gas tube which is co-axially disposed between said grounded electrode and said powered electrode and acts to electrically insulate said electrodes;
• said gas tube having a gas emission orifice disposed proximate said grounded plate and powered plate to emit gas between said plates;
• and
• wherein said grounded electrode is formed to slideably protrude through said base plate;
• whereby said electrodes may be incrementally extended throughout the length of said chamber by gradual extension of said electrodes through said base plate.

A chemical vapor deposition chamber system for the in-situ cleaning of LPCVD tube chambers or RPE bell jar chambers comprising:

• a base member formed to create a vacuum seal upon engagement with the loading end of said chamber, said base member having a hole formed centrally therethrough;
• a quartz tube formed to protrude through said hole in said base member and extend axially within said chamber, said quartz tube being sealed at the end thereof which protrudes into said chamber, and said quartz tube engaging the base member to form a vacuum seal at said engagement with said base member;
• at least one powered electrode formed to protrude into said chamber and being disposed within said quartz tube;
• at least one grounded electrode formed to protrude into said chamber and being disposed within said quartz tube;
• a means for introducing a plasma forming gas into said chamber;
• a means to evacuate said chamber such that a plasma can be created within said chamber;
• an electrical network formed to create a radio frequency electrical field between said powered electrode and said grounded electrode, whereby a plasma is created in said chamber by the interaction of said gas and said RF field, said plasma acting to etch unwanted deposits from the inner wall of said chamber.