Electrophotographic photosensitive member having a photoconductive layer of an amorphous material
AssigneeKabushiki Kaisha Toshiba
InventorMutsuki Yamazaki
Life of this patent
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Abstract
An electrophotographic photosensitive member, which is used for electrophotography, has a high dark resistivity and a high durability and achieves high charge acceptability and retentivity, the electrophotographic photosensitive member comprising a substrate, a photoconductive layer, a barrier layer provided between the substrate and the photoconductive layer for substantially inhibiting injection of carriers from the substrate to the photoconductive layer, and a covering layer provided on the photoconductive layer, wherein the layers are formed of amorphous hydrogenated silicon carbide doped with impurities.
Claims12
An electrophotographic photosensitive member comprising:
- (a) an electroconductive substrate;
- (b) a barrier layer, provided on said substrate and comprised of amorphous hydrogenated silicon carbide doped with an atom of Group III-A or V-A in the Periodic Table as an impurity, for blocking injection of carriers from said substrate;
- (c) a photoconductive layer, provided on said barrier layer and comprised of amorphous hydrogenated silicon carbide doped with an atom of Group III-A or V-A in the Periodic Table as an impurity, for generating photocarriers by light exposure;
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- (d) a covering layer, provided on said photoconductive layer and comprised of amorphous hydrogenated silicon carbide doped with an atom of Group III-A or V-A in the Periodic Table as an impurity, for retaining charges which may be neutralized by photocarriers generated in said photoconductive layers thereon.
An electrophotographic photosensitive member comprising:
- (a) a substrate;
- (b) a barrier layer, provided on said substrate, for blocking injection of carriers from said substrate, said barrier layer comprising an amorphous material which is comprised of silicon and carbon and which is doped with an atom of Group III-A or V-A in the Periodic Table as an impurity present in the range from about 5.times.10.sup.-3 to 1 atomic %;
- (c) a photoconductive layer, provided on said barrier layer, for generating photocarriers by light exposure, said barrier layer comprising an amorphous material which is comprised of silicon and carbon, which is doped with an atom of Group III-A or V-A in the Periodic Table as an impurity, which has a photoconductivity of more than 10.sup.-7 cm.sup.2 /V, and which has a dark resistivity of more than 10.sup.11 ohm-cm;
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- (d) a covering layer, provided on said photoconductive layer, for retaining charges which can be neutralized by photocarriers generated in said photoconductive layer, said covering layer comprising an amorphous material which is comprised of silicon and carbon, which is doped with an atom of Group III-A or V-A in the Periodic Table as an impurity, and which has an optical band gap this is larger than that of said photoconductive layer.
Dependencies are inferred from the claim text.