US 4,652,766 AGranted

Direct coupled charge injection readout circuit and readout method for an IR sensing charge injection device

AssigneeGeneral Electric Company

InventorsSamuel C. Wang, John M. Swab

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Abstract

The invention relates to an improved readout circuit and readout method for an IR sensing array. The invention, given a limited time interval for reading out the signal from a sensor element in an array of sensor elements, permits a longer time to be devoted to the injection of charges into the substrate, thereby reducing device "lag" (the retention of uninjected charges). The readout is carried out by a two step, direct coupled, injection process. The first step involves independent, but simultaneous resetting of the sensor elements and the preamplifier input (at a node having sufficient capacity to supply the charges required for injection). The voltages are suitable for IR induced charge storage in the sensor elements, and for subsequent injection by the nodal capacity. A first sample is taken by a correlated double sampling circuit from the preamplifier output during the first step as the resetting stabilizes. In the second step, the selected sensor element is connected to the preamplifier input to cause the charge injection. At the same time the preamplifier is responding to the charge transfer. The second sample is taken from the preamplifier output at the end of injection. The reduction in lag over conventional AC coupled readout circuits is 80%.

In a charge injection device (CID) for IR sensing having reduced device lag, the combination comprising

A. n IR sensor elements (E.sub.1-n) arranged in an array on a substrate, each element equivalently representable by a capacitor, diode, and battery network, which when reversely biased to a suitable voltage (VB) forms a potential well in which IR induced charges are stored,
B. a readout circuit, comprising
(1) n input terminals (IT.sub.1, 2, 3 . . . n) each connected to one of said n sensor elements E.sub.(1-n), a node including a sensing line, and a signal output terminal,
(2) a first voltage source and n controllable reset switches (S1.sub.1, 2, 3 . . . n), for periodically biasing said sensor elements to said charge storing voltage,
(3) amplification means having the input thereof coupled to said node, said node exhibiting a capacitance,
(4) a second voltage source having a value selected to remove charge from said potential well and a reset switch (S3) for periodically resetting said node to said second voltage,
the resetting of said sensor elements and said node to said first and said second voltages, respectively, occurring simultaneously as the first step in the readout sequence of each sensor element,
(5) a scanning shift register, and n element select switches (S2.sub.1, 2, 3 . . . n) controlled thereby for connecting successive sensor elements for readout to said node to inject the charges stored in said well into the substrate as the voltage at said node and the selected sensor element equalize at a voltage dependent on IR intensity, said injection being the second step in the sensor readout sequence, and
(6) a correlated double sampling circuit whose input is connected to said node, and whose output is connected to said signal output terminal for taking a first voltage sample following reset, but prior to injection, and a second voltage sample during injection, the readout value for the selected sensor representing the difference between said first and second sample voltages.

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Abstract

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