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US 4,643,950 AGranted
Semiconductor device
AssigneeAgency of Industrial Science and Technology
InventorsAtsushi Ogura, Koji Egami
Life of this patent
Estimating the term…
Abstract
In a laminated semiconductor device comprising a substrate, an insulating layer formed on the substrate and at least one active layer formed on the insulating layer, the insulating layer contains an AlN layer as an interlayer insulating film.
Claims5
A semiconductor device comprising:
- a substrate, an insulating layer formed on said substrate, said insulating layer containing an AlN layer as an interlaid insulating film, and at lease one active layer formed on said insulating layer.
Dependencies are inferred from the claim text.