Piezoelectric resonating device
AssigneeKabushiki Kaisha Toshiba
InventorsHitoshi Suzuki, Hiroaki Sato
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Abstract
The present invention provides a piezoelectric thin-film resonator comprising a non-piezoelectric film layer formed on a substrate, a lower electrode, a piezoelectric film layer and an upper electrode. An air-gap layer is formed between the non-piezoelectric film and the substrate to facilitate vibration of the piezoelectric film layer at the resonate frequency. The resulting resonating device is mechanically strong while at the same time being capable of operating at high frequency.
Claims17
A piezoelectric resonating device comprising:
- a substrate having a substantially flat surface;
- a non-piezoelectric film layer formed on said flat surface to create an air-gap between a portion of said non-piezoelectric film layer and said flat surface;
- a first electrode formed on said non-piezoelectric film and extending along said air-gap;
- a piezoelectric film layer formed on said non-piezoelectric film layer and said first electrode;
- and
- a second electrode formed on said piezoelectric film layer and extending along said air-gap.
A piezoelectric resonating device comprising:
- a substrate having a substantially flat surface;
- a non-piezoelectric film layer formed on said flat surface to create an air-gap between said non-piezoelectric film layer and said flat surface;
- a lower electrode formed on said non-piezoelectric film layer;
- a piezoelectric film layer formed on said non-piezoelectric film layer and said lower electrode;
- an upper electrode formed on said piezoelectric film layer so as to interface with said lower electrode;
- and
- a dielectric film layer formed on said piezoelectric film and said upper electrode.
A piezoelectric resonating device comprising:
- a substrate having a substantially flat surface;
- a metal film layer formed on said flat surface to create an air-gap between said flat surface and said metal film;
- a piezoelectric film formed on said metal film;
- and
- an upper electrode formed on said piezoelectric film layer.
Dependencies are inferred from the claim text.