Focused ion beam processing
AssigneeMicrion Limited Partnership
InventorsJohn A. Doherty, Billy W. Ward, David C. Shaver
Life of this patent
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Abstract
An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.
Claims15
Focused ion beam processing apparatus comprising,
- a source of a finely focused ion beam of submicron shape for impingement upon a substrate surface in a predetermined surface plane,
- a source of an electron beam,
- and means for directing said electron beam toward said surface plane in a region embracing the target point in said surface plane intersected by said ion beam for neutralizing the surface charge in said surface plane otherwise produced thereat by said ion beam to reduce defocusing and undesired deflection of said ion beam in said surface plane to allow precise positioning of said ion beam on said target point and maintenance of said submicron shape of said ion beam on said target point.
Focused ion beam processing apparatus comprising,
- a source of a finely focused ion beam for impingement upon a substrate surface in a predetermined surface plane,
- a source of an electron beam,
- means for directing said electron beam toward said surface plane in a region embracing the point in said surface plane intersected by said ion beam for neutralizing the surface charge in said surface plane otherwise produced thereat by said ion beam to reduce defocusing and undesired deflection of said ion beam in said surface plane,
- said detecting means comprising an electron and ion detector for detecting electrons and ions secondarily emitted from said substrate surface in response to impingement by said ion beam,
- grid means interposed between said electron and ion detector and said surface plane for selectively establishing an electric field that prevents electrons from entering said electron and ion detector while allowing ions to enter,
- and means for selectively biasing said grid means to establish said electric field.
Dependencies are inferred from the claim text.