Method of manufacturing semiconductor substrate
AssigneeKabushiki Kaisha Toshiba
InventorsMasaru Shimbo, Kiyoshi Fukuda, Yoshiaki Ohwada
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Abstract
A method of manufacturing a semiconductor substrate having a modified layer therein comprises the steps of mirror-polishing one surface of each of first and second semiconductor plates, forming a modified layer on at least one of the polished surfaces of the first and second semiconductor plates, and bonding the polished surfaces of the first and second semiconductor plates with each other in a clean atmosphere.
Claims15
A method of manufacturing a semiconductor substrate having a modified layer therein, comprising the steps of:
- mirror-polishing one surface of each of first and second semiconductor plates;
- forming a modified layer on at least one of the polished surfaces of said first and second semiconductor plates;
- and
- bonding the polished surfaces of said first and second semiconductor plates with each other in a clean atmosphere without thermal fusing of said first and second semiconductor plates.
A method of manufacturing a semiconductor substrate having a modified layer therein, comprising the steps of:
- mirror-polishing one surface of each of first and second semiconductor plates;
- forming at least one groove in at least one of the polished surfaces of said first and second semiconductor plates, the groove opening to end faces of the semiconductor plate;
- bonding the polished surfaces of said first and second semiconductor plates in a clean atmosphere so as to obtain a bonded structure;
- and
- placing said bonded structure in an atmosphere containing a semiconductor modifying gas so as to form a modified layer in and around said groove.
Dependencies are inferred from the claim text.