Gas mixtures for the vapor deposition of semiconductor material
AssigneeEnergy Conversion Devices, Inc.
InventorsStanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi C. Yang, Jeffrey Fournier, James Kulman
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Abstract
Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
Claims9
A gaseous precursor mixture from which semiconductor alloy material may be deposited by glow discharge decomposition:
- said mixture including disilane and germane.
Dependencies are inferred from the claim text.