Semiconductor device having overload protection
AssigneeU.S. Philips Corporation
InventorBernard P. Roger
Life of this patent
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Abstract
The transistor includes a semiconductor body having a surface on which are disposed metallic connection contact areas, including means for protection from overloads. At least one of the metallic area comprises a material, such as Al, susceptible to forming a eutectic with the substrate, which is made, for example, of Si. The metallic area is formed from an alloy of the material, such as the Al-Si eutectic, having a melting point whose temperature is lower than the formation temperature of the Al-Si eutectic and higher than the temperature of soldering the semiconductor body on a support.
Claims8
A semiconductor device comprising a support, a semiconductor body soldered on said support and comprising a surface, metallic connection contact areas on said surface, at least one contact wire connected to one of said contact areas, and means for protecting said device from overloads, at least one of said metallic areas comprising a material capable of forming a eutectic with the semiconductor body formed from an alloy of said material having a melting point whose temperature is lower than the temperature of formation of said eutectic and higher than the temperature of soldering the semiconductor body on its support so that said at least one metallic area will melt prior to the formation of said eutectic upon overload of said device.
Dependencies are inferred from the claim text.