Unit of light emitting diode arrays

Abstract

A unit of light emitting diode arrays in accordance with the present invention comprises a main body (21) of n-GaAs, layers (22) and (23) of n-GaAsP formed on the main body and a plurality of light emitting regions (24) formed in a line by diffusion of Zn on the surface of the layers. Each of the light emitting regions (24) has a rectangular shape and contains a protruding portion (241). In the direction intersecting at right angles with the light emitting regions (24) formed in a line, electrodes (25) are provided alternately. These electrodes (25) are formed by evaporation and photolithography to cover the respective protruding portions (241) so as to be in ohmic contact. Thus, since the electrodes (25) are formed to cover the protruding portions (241) of the light emitting regions (24), a printing dot of a desired shape can be formed and accordingly, the quality of printing can be improved and an arrangement of a high density of printing dots can be made.

Dependencies are inferred from the claim text.