Very high frequency oscillator with gyromagnetic resonators
AssigneeThomson-CSF
InventorRene Leiba
Life of this patent
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Abstract
A very high frequency oscillator (4-22 GHz) including field effect transistor and first and second YIG sphere resonators whose reactant frequencies are displaced, which gives the oscillator a wide frequency range. The first YIG sphere is doubly coupled to the source and gate of the transistor, which gives the oscillator good linearity (.perspectiveto.10.sup.-3) over its frequency range. The second YIG sphere is coupled to the gate by a coupling wire which also couples to the first YIG sphere.
Claims6
A very high frequency oscillator having a field effect transistor, whereof the source is connected to a first gyromagnetic resonator dipole, the gate is connected to a second gyromagnetic resonator dipole and the drain is connected to a load impedence, the two gyromagnetic resonators being simultaneously regulatable by the same electrical means, wherein the first resonator is doubly coupled by a first electrical conductor connected to the transistor source and by a second electrical conductor connected to the transistor gate, the second electrical conductor being also doubly coupled to the second resonator.
Dependencies are inferred from the claim text.