Infrared sensor
AssigneeKureha Kagaku Kogyo Kabushiki Kaisha
InventorsMotohisa Nara, Yasushi Endo
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Abstract
In an infrared sensor having a pyroelectric element and a FET in a high frequency electric field and infrared radiation shielding case, a capacitor is located in the case and connected to at least one of the drain and source electrodes of the FET in order to remove an influence due to an external high-frequency electric field.
Claims5
An infrared sensor comprising a pyroelectric element and a field effect transistor having drain, source and gate electrodes in a high frequency electric field and infrared radiation shielding case, the gate electrode being coupled with the pyroelectric element, wherein a capacitor is located in the case and connected between at least one of said drain and source electrodes of said field effect transistor and a ground potential.
Dependencies are inferred from the claim text.