Photoelectrochemical preparation of a solid-state semiconductor photonic device
AssigneeUnion Oil Company of California
InventorJay A. Switzer
Life of this patent
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Abstract
A solid-state semiconductor photonic device is prepared by a photoelectrochemical deposition method. The device contains a highly conductive coating material including one or more metals and/or semiconductors on a substrate containing a semiconductor material. The device is utilized in photodetectors, including radiometric detection cells, in conversions of electrical energy to optical radiation, such as light-emitting-diodes and diodes lasers, and in photovoltaic cells, including Schottky-barrier cells.
Claims25
A method for the preparation of a solid-state semiconductor photonic device comprising photoelectrochemically depositing a conductive coating material which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors, said conductive coating material selected from the group consisting of metals and semiconductors.
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectrochemical deposition of a conductive coating material containing a metal which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectrochemical deposition of a conductive coating material containing a semiconductor which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectroless deposition of a conductive coating material which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors, said coating material selected from the group consisting of metals and semiconductors.
Dependencies are inferred from the claim text.