Process for passivation of photoconductive detectors made of Hg Cd Te
AssigneeSat
InventorAndre Gauthier
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Abstract
The present invention relates to a process for passivation of photoconductive detectors constituted by Hg Cd Te, wherein a layer of native oxide is formed on the faces of an Hg Cd Te wafer and it is made to grow, by pure chemical oxidation in an aqueous solution of K.sub.3 Fe(CN).sub.6 and of KOH. An ordinary layer of ZnS is then formed on the oxide layer. The process makes it possible to produce high-performance infrared detectors, simply.
Claims7
A process for passivation of photoconductive detectors comprising Hg Cd Te, which process comprises forming a layer of native oxide on at least one of the faces of a wafer of a photoconductive detector material which is then made to grow, said process being characterized in that the layer of native oxide is formed by pure chemical oxidation in an aqueous solution of K.sub.3 Fe(CN).sub.6 in a basic medium.
Dependencies are inferred from the claim text.