Laser stimulated halogen gas etching of metal substrates
AssigneeIBM Corporation
InventorsWarren D. Grobman, Fahfu Ho, Jerry E. Hurst, Jr., John J. Ritsko, Yaffa Tomkiewicz
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Abstract
A method of radiation induced dry etching of a metallized (e.g. copper) substrate is disclosed wherein the substrate is pattern-wise exposed to a beam of laser radiation in a halogen gas atmosphere which is reactive with the substrate to form a metal halide salt reaction product to accelerate the formation of the metal halide salt without its substantial removal from the substrate. The metal halide salt is removed from the substrate by contact of the substrate with a solvent for the metal halide salt.
Claims14
A method of radiation induced dry etching of a metallized substrate comprising the steps of
- (a) mounting the substrate in a reaction chamber,
- (b) introducing into the chamber a halogen gas which is reactive with the substrate to form a metal halide salt reaction product,
- (c) projecting a patterned beam of laser radiation onto the substrate at a wave-length suitable for absorption by the metal halide to accelerate the reaction between the halogen gas and the substrate in the patterned areas without substantial removal of the reaction product which forms therein, and then
- (d) removing the metal halide reaction product from the substrate by contact of the substrate with a solvent for the metal halide salt reaction product.
A method of radiation induced dry etching of a metallized substrate comprising the steps of
- (a) mounting the substrate in a reaction chamber,
- (b) introducing, under high pressure, into the chamber a halogen gas which is reactive with the substrate, said substrate being heated, to form a metal halide salt reaction product, and
- (c) projecting a patterned beam of laser radiation onto the substrate to substantially completely remove the metal halide in the patterned areas.
Dependencies are inferred from the claim text.