Process for producing high-purity metal targets for LSI electrodes
AssigneesNihon Kogyo Kabushiki Kaisha, Nippon Telegraph & Telephone Public Corporation
InventorsHideo Oikawa, Takao Amazawa, Nakahachiro Honma, Hideo Miyazaki, Iwao Kyono, Nobuyuki Mori, Yoshiharu Katoh, Masami Kuroki
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Abstract
A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.
Claims4
A process for producing a high-purity metal target for the formation of LSI electrodes, in which the target has an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb, comprising the steps of dissolving a metal or metal compound, the metal selected from the group consisting of molybdenum and tungsten, into an acid or ammonia to form an aqueous metal-containing solution, filtering the aqueous solution causing the aqueous metal-containing solution to form metal-containing crystals by adjusting temperature and composition of the solution, collecting the crystals by solid-liquid separation, washing and drying the collected crystals, reducing the dried crystals by heating in the presence of high-purity hydrogen to prepare a high-purity metal powder, compacting the powder, sintering the compact, electron beam melting the sintered compact to produce a high-purity metal ingot, and thereafter plastically working the ingot with subsequent machining.
Dependencies are inferred from the claim text.