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US 4,615,905 AGranted
Method of depositing semiconductor films by free radical generation
AssigneeSovonics Solar Systems
InventorsStanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
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Abstract
A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.
Claims22
A process for depositing semiconductor alloy films onto a substrate, comprising:
- providing a plurality of sources of energy;
- providing a substantially enclosed reaction vessel containing the substrate;
- evacuating the reaction vessel to a pressure below atmospheric;
- providing at least first and second gaseous mixtures including a semicoductor-containing reaction gas;
- activating the plurality of energy sources to form at least a first and second group of desired free radicals from the first and second gaseous mixtures;
- providing separate control over the first and second groups of free radicals;
- selectively incorporating the first and second groups of desired free radicals into a semiconductor alloy film deposited onto the substrate at high deposition rates with high gas conversion efficiencies and without any significant powder or polymeric inclusions.
4 more elements
Dependencies are inferred from the claim text.