CuInSe.sub.2 thin film solar cell with thin CdS and transparent window layer
AssigneeAtlantic Richfield Company
InventorsUppala V. Choudary, Yuh-Han Shing, Richard R. Potter, James H. Ermer, Vijay K. Kapur
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Abstract
A thin film photovoltaic device having first layer of copper indium selenide, a second layer of cadmium sulfide having a thickness less than 2500 angstroms, and a third layer of conducting wide bandgap semiconductor such as zinc oxide. The transparent third layer allows good transmission of blue light to the junction region while fully depleting the junction area to improve device voltage.
Claims5
A thin film photovoltaic device comprising a first layer of copper indium diselenide p-type semiconductor, a second layer in overlying contact with said first layer and formed of n-type cadmium sulfide semiconductor having a thickness of less than 2500.ANG., and a third layer in overlying contact with said second layer and formed of a substantially transparent degenerate wide bandgap n-type semiconductor.
A thin film photovoltaic device comprising a first layer of p-type copper indium diselenide, a second layer in overlying contact with said first layer and formed of an n-type group II-VI semiconductor which forms a junction with the first layer and having a thickness less than 2500 angstroms, and a third layer in overlying contact with said second layer and formed of a substantially conducting wide bandgap n-type semiconductor.
Dependencies are inferred from the claim text.