Magneto-optic memory element
AssigneeSharp Kabushiki Kaisha
InventorsAkira Takahashi, Yoshiteru Murakami, Junji Hirokane, Hiroyuki Katayama, Kenji Ohta, Hideyoshi Yamaoka
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Abstract
A magneto-optic memory element includes a transparent substrate, a first transparent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film formed in this order. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having the index of refraction of about 2.0, and the second transparent nitride film is an AlN film having the index of refraction of about 1.8 to 1.9.
Claims15
A magneto-optic memory element comprising:
- a transparent substrate;
- a first transparent nitride dielectric layer formed on said transparent substrate, said first transparent nitride dielectric layer having a first index of refraction;
- an alloy thin-film recording layer including rare earth element and transition metal formed on said first transparent nitride dielectric layer;
- a second transparent nitride dielectric layer formed on said alloy thin-film recording layer, said second transparent nitride dielectric layer having a second index of refraction which is smaller than said first index of refraction;
- and
- a reflection layer formed on said second transparent nitride dielectric layer.
A magneto-optic memory element comprising:
- a transparent substrate;
- a first nitride transparent dielectric layer formed on said transparent substrate, said first transparent dielectric layer having a first index of refraction;
- an alloy thin-film recording layer formed on said first transparent dielectric layer;
- and
- a second nitride transparent dielectric layer formed on said alloy thin-film recording layer, said second transparent dielectric layer having a second index of refraction which is smaller than said first index of refraction.
Dependencies are inferred from the claim text.