Method and apparatus for correcting delicate wiring of IC device

An apparatus for correcting a device comprising:

• a specimen chamber formed inside a vacuum vessel;
• a table for placing a specimen thereon, disposed inside said specimen chamber;
• an ion source having a high brightness, such as provided by a liquid metal ion source, and disposed inside said vacuum vessel so as to oppose said specimen chamber;
• means for extracting an ion beam from said ion source;
• a charged particle optical system for focusing said ion beam thus extracted onto said specimen;
• and
• means for controlling the output of said ion beam, the spot diameter and the radiating direction of the spot so as to radiate said ion beam onto a wiring portion of a device, including a scanning ion microscope unit for visually observing said specimen during radiation of said ion beam onto said specimen.

A method of correcting a device comprising:

• extracting an ion beam from an ion source having a brightness such as provided by a liquid metal ion source or the like;
• converging said ion beam to a fine spot by means of a charged particle optical system applied at a voltage above several KV and an aperture;
• aligning said ion beam and locating a wiring portion outside an active layer region of a device by positioning said spot while observing a step surface portion of a passivation film on said wiring portion by means of a scanning ion microscope unit;
• radiating said ion beam onto the passivation film portion on said wiring portion and on said wiring portion itself to remove sequentially said passivation film portion and said wiring portion by a sputtering process without causing damage to a peripheral device or damage to the active layer region of the device;
• and
• depositiing a film on a bore portion produced when the passivation film portion and wiring portion were removed by said ion beam by radiating the ion beam at a voltage below said several KV to said specimen provided in an atmosphere introducing a gas.