US 4,609,407 A · Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers · patentgrep

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Abstract

Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

Claims38

Dependent claims

A method of fabricating a semiconductor device, comprising:

(a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film, said single-crystalline silicon semiconductor substrate having at least one impurity-doped region in its surface region;
(b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered;
(c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate;
and
(d) forming at least on pn-junction in the single-crystallized portion of the semiconductor film.

2 more elements

A method of fabricating a semiconductor device, comprising:

forming at least one impurity doped region in a surface region of a single crystalline silicon semiconductor substrate;
coating the surface of the single-crystalline silicon semiconductor substrate at a portion thereof with an insulating film, leaving exposed a portion of the surface of the semiconductor substrate;
coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered;
irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate;
and
forming at least one pn-junction in the single-crystallized portion of the semiconductor film.

3 more elements

A method of fabricating a semiconductor device, comprising:

(a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film;
the desired portion of the substrate having the insulating film formed thereon, in cross-section, having exposed substrate on both sides thereof;
(b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered, the polycrystalline silicon semiconductor film or amorphous silicon semiconductor film being coated to continuously cover the exposed substrate on one side of the insulating film and at least a first portion of the insulating film, and to continuously cover the exposed substrate on the other side of the insulating film and at least a second portion of the insulating film;
(c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate, at least a part of the polycrystalline silicon semiconductor film or amorphous silicon semiconductor film on the exposed substrate on both sides and on at least desired portions of the insulating film being irradiated with a laser beam so that at least a portion of the irradiated film on the exposed substrate on both sides of the insulating film and on the insulating film is single crystallized, and so that the single crystallization of the polycrystalline or amorphous semiconductor film proceeds in a direction from both sides of the insulating film to the insulating film, and
(d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film.

2 more elements

A method of fabricating a semiconductor device, comprising:

(a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film;
(b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered;
(c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate;
(d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film;
(e) coating a portion of the surface of the single-crystallized portion of the semiconductor film with another insulating film;
(f) coating the exposed surface of the single-crystallized portion and the another insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystallized portion and a desired portion of the another insulating film are continuously covered;
(g) irradiating the polycrystalline or amorphous silicon film on the single-crystallized portion and on the desired portion of the another insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion of the another insulating film and the irradiated film on the exposed surface of the single-crystallized portion is single-crystallized, so as to form a second single-crystalline silicon semiconductor film continuously coating both the surface of the single-crystallized portion and the desired portion of the another insulating film;
and
(h) forming at least one pn-junction in the single-crystallized portion of the another semiconductor film, whereby dual-level single-crystalline semiconductor films are formed.

6 more elements

A method of fabricating a semiconductor device, comprising:

(a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film;
(b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline semiconductor substrate and a desired portion of the insulating film are continuously convered;
(c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate, said irradiating being performed to melt the film on the exposed surface of the substrate and to single-crystallize the film on the exposed surface and to effect single-crystalline growth from the end portion of the single-crystallized film on the exposed surface of the substrate to single-crystallize said at least a portion of the irradiated film on said desired portion of the insulating film.

A method of fabricating a semiconductor device, comprising:

(a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film;
(b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously convered;
(c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate;
(d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film;
and
(e) forming at least one semiconductor element having at least one region thereof in said single-crystallized portion of the semiconductor film.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 06/563,036Filed 19 Dec 1983 · continuation
Priority: JP 54-15008021 Nov 1979
Granted: 2 Sep 1986
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 62/40
Semiconductor bodies, or regions thereof, of devices having potential barriers: crystalline structures
H10D 84/65
Characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs: integrated…
H10D 88/00
Three-dimensional [3d] integrated devices

Family

Serial209,113Parent of this continuation · filed 21 Nov 1980
US 4,609,407 AThis patent

From the US filing history. Foreign family members aren’t listed.

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