Methods of manufacturing semiconductor devices
AssigneeU.S. Philips Corporation
InventorsStanley D. Brotherton, Audrey Gill, Michael J. King
Life of this patent
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Abstract
A plasma and heating treatment is carried out to reduce the density of charge carrier traps adjacent the interface of an insulating layer of a thermally grown silicon dioxide and a semiconductor body. During this plasma and heating treatment, the device is covered with an additional layer of silicon containing hydrogen, such as silane, for example, and this additional layer protects the insulating layer from direct bombardment of the plasma. During and/or after the plasma treatment, heating of the structure is at about 400.degree. C. or less. After the plasma and heating treatment, the additional layer is removed from at least most parts of the semiconductor device structure.
Claims26
A method of manufacturing a semiconductor device comprising the steps of
- forming an insulating layer at a major surface of a semiconductor body,
- covering said insulating layer by an additional layer of polycrystalline silicon,
- performing a plasma and heating treatment to reduce the density of charge carrier traps adjacent the interface of said insulating layer and said semiconductor body, said insulating layer being protected by said additional layer from direct bombardment by said plasma, and
- removing said additional layer from at least most areas of said insulating layer following said plasma and heating treatment.
A method of manufacturing a semiconductor device comprising the steps of
- forming an insulating layer at a major surface of a semiconductor body,
- covering said insulating layer by an additional layer of polycrystalline silicon,
- performing a plasma and heating treatment to reduce the density of charge carrier traps adjacent the interface of said insulating layer and said semiconductor body, said insulating layer being protected by said additional layer from direct bombardment by said plasma, and
- removing said additional layer entirely from said insulating layer and semiconductor body following said plasma and heating treatment.
A method of manufacturing a semiconductor device comprising the steps of
- forming an insulating layer at a major surface of a semiconductor body,
- covering said insulating layer by an additional layer of polycrystalline silicon,
- performing a plasma and heating treatment to reduce the density of charge carrier traps adjacent the interface of said insulating layer and said semiconductor body, said insulating layer being protected by said additional layer from direct bombardment by said plasma,
- removing said additional layer from at least most areas of said insulating layer following said plasma and heating treatment, and
- forming at least one electrode on said insulating layer after removing said additional layer, said electrode serving to control passage of charge carriers in underlying portions of said semiconductor body by capacitive coupling across said insulating layer.
A method of manufacturing a semiconductor device comprising the steps of
- forming an insulating layer at a major surface of a semiconductor body,
- forming at least one electrode on said insulating layer, said electrode serving to control passage of charge carriers in underlying portions of said semiconductor body by capacitive coupling across said insulating layer,
- covering said insulating layer and said electrode by an additional layer of polycrystalline silicon,
- performing a plasma and heating treatment to reduce the density of charge carrier traps adjacent the interface of said insulating layer and said semiconductor body, said insulating layer being protected by said additional layer from direct bombardment by said plasma, and
- removing said additional layer from at least most areas of said insulating layer following said plasma and heating treatment.
Dependencies are inferred from the claim text.