Method of forming a large number of monocrystalline semiconductor regions on the surface of an insulator

A method of forming a large number of monocrystalline semiconductor regions on a surface of an insulator, the monocrystalline semiconductor regions having a uniform orientation, comprising the steps of:

• (a) forming a semiconductor layer consisting of a polycrystalline or amorphous semiconductor on said surface of said insulator;
• (b) patterning said semiconductor layer to form a large number of island regions with connecting regions connecting said island regions to one another in a predetermined direction, said connecting regions having a cross-sectional area in a direction at right angles to said predetermined direction which is smaller than that of said island regions;
• (c) melting and regrowing said island regions and said connecting regions sequentially in said predetermined direction so as to form said monocrystalline semiconductor regions having said uniform orientation;
• and
• (d) removing said connecting regions.

A method of forming a large number of monocrystalline semiconductor regions on a surface of an insulator, the monocrystalline semiconductor regions having a uniform orientation, comprising the steps of:

• (a) forming a semiconductor layer consisting of a polycrystalline or amorphous semiconductor on a flat surface of said insulator;
• (b) patterning said semiconductor layer to form a large number of island regions, with connecting regions connecting thermally said island regions to one another in a predetermined direction, said connecting regions having a cross-sectional area at right angles to said predetermined direction which is smaller than that of said island regions;
• and
• (c) melting and regrowing said island regions and said connecting regions sequentially in said predetermined direction so as to form said monocrystalline semiconductor regions having said uniform orientation.

A method of forming a large number of monocrystalline semiconductor regions on a surface of an insulator, the monocrystalline semiconductor regions having a uniform orientation, comprising the steps of:

• (a) forming a semiconductor layer consisting of a polycrystalline or amorphous semiconductor on said surface of said insulator;
• (b) patterning said semiconductor layer to form a large number of island regions, connecting regions connecting said island regions to one another in a predetermined direction, and which connecting regions have a cross-sectional area at right angles to said predetermined direction, which is smaller than that of said island regions, and film regions covering those portion of said surface of said insulating material other than the portions of said surface covered by said island and connecting regions, and which film regions are thinner than said island and connecting regions;
• (c) sequentially melting and regrowing said island regions, said connecting regions and said film region in said predetermined direction so as to form said monocrystalline semiconductor regions having said uniform orientation;
• and
• (d) separating electrically said island regions from one another.

A method of forming a large number of monocrystalline semiconductor regions on a surface of an insulator, the monocrystalline semiconductor regions having a uniform orientation, comprising the steps of:

• (a) forming a large number of island regions consisitng of a polycrystalline or amorphous semiconductor on said surface of said insulator;
• (b) connecting said island regions to one another in a predetermined direction by connecting members made of a material with a higher heat conductivity than said semiconductor;
• (c) melting and regrowing said island regions sequentially in said predetermined direction so as to form said monocrystalline semiconductor regions having said uniform orientation;
• and
• (d) removing said connecting members.

A method of forming a large number of monocrystalline semiconductor regions on a surface of an insulator, the monocrystalline semiconductor regions having a uniform orientation, comprising the steps of:

• (a) forming a semiconductor layer consisting of a polycrystalline or amorphous semiconductor on said surface of said insulator;
• (b) patterning said semiconductor layer to form a large number of island regions with connecting regions connecting said island regions to one another in a predetermined direction, said connecting regions having a cross-sectional area in a direction at right angles to said predetermined direction which is smaller than that of said island regions;
• and
• (c) melting and regrowing said island regions and said connecting regions sequentially in said predetermined direction so as to form said monocrystalline semiconductor regions having said uniform orientation.