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US 4,596,070 AGranted
Interdigitated IMPATT devices
AssigneeTexas Instruments Incorporated
InventorBurhan Bayraktaroglu
Life of this patent
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Abstract
The disclosure relates to a semiconductor substrate having an active area for formation of an IMPATT device which is formed as a plurality of separated fingers having a common n+ region to spread the area over which the IMPATT is disposed and which provides such additional area for dissipation of heat through the substrate.
Claims16
A method of forming a monolithic semiconductor structure which comprises the steps of:
- (a) providing a semiconductor substrate having an active region on a portion of the surface thereof, said active region having a plurality of layers in the arrangement of an IMPATT deivce;
- (b) forming plural fingers, each finger including all of said layers of said active region with the bottommost layer of said active region common to all of said fingers;
- (c) electrically isolating said active region from other surface regions of said substrate;
- (d) placing an electrical insulator between said fingers;
- and
- (e) placing an electrical conductor over said electrical insulator in contact with the layer of said fingers remote from said substrate.
3 more elements
Dependencies are inferred from the claim text.