Method of patterning thin film

A process of forming a thin film magnetic head comprising the steps of:

• (a) forming a thin alumina film on a substrate, said substrate including a permalloy layer to constitute the lower permalloy film of said thin film magnetic head;
• (b) forming a photoresist film of a predetermined pattern on said thin alumina film, said predetermined pattern including openings on the lower permalloy film;
• (c) removing exposed portions of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, herein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600V, thereby exposing portions of said lower permalloy film while substantially not etching said lower permalloy film;
• and
• (d) forming an upper permalloy film so as to contact exposed portions of said lower permalloy film and to extend on said alumina film.

A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of:

• (a) forming a thin metal film on said desired surface, including on the uneven portion;
• (b) forming a thin alumina film on said thin metal film, including on the uneven portion;
• (c) forming a photoresist film of a predetermined pattern on said thin alumina film, including on the uneven portion;
• (d) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said photoresist film as a mask, wherein an ion accelerating voltage during the on beam etching technique using a carbon fluoride gas is equal to or greater than 600V;
• and
• (e) removing an exposed portion of said thin metal film by an ion beam etching technique using argon, while using said thin alumina film as a mask.

A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of:

• (a) forming a thin metal film on the desired surface, including on the uneven portion;
• (b) forming a thin alumina film of a predetermined pattern on said thin metal film, including on the uneven portion, the thin alumina film of a predetermined pattern being formed utilizing an ion beam etching technique using a carbon fluoride gas, with an ion accelerating voltage used in the ion beam etching technique using carbon fluoride gas being equal to or greater tthan 600V;
• and
• (c) removing an exposed portion of said thin metal film by an ion beam etching technique using argon, while using said thin alumina film as a mask.

A method of patterning a thin film mainly consisting of a permalloy, chromium or other metals, having uneven portions, comprising the steps of:

• successively depositing a first film mainly consisting of permalloy, chromium or other metals on a substrate, said first film having uneven portions, a second film mainly consisting of alumina on the first film, including on the uneven portions thereof, and a third film including a photoresist layer on the second film, including on the uneven portions;
• exposing and patterning said third film;
• etching said second film using said patterned third film as a mask in an ion-beam etching technique using carbon fluoride, with an ion accelerating voltage used in the ion-beam etching technique using carbon fluoride being equal to or greater than 600V;
• and
• etching said first film using said etched second film as a mask in an ion-beam etching technique using argon.

A method of forming a thin film magnetic head, comprising the steps of:

• (a) forming a thin alumina film on the top surface of a substrate;
• said substrate comprising lower and upper permalloy films for forming a magnetic circuit, a coil conductor disposed between the permalloy films and crossing the magnetic circuit, and a gap member interposed between the permalloy films for forming a magnetic gap, said substrate having an uneven surface;
• said thin alumina film being formed on the upper permalloy film, including on said uneven surface;
• (b) forming a photoresist film of a predetermined pattern on said thin alumina film, including on said uneven surface;
• (c) removing an exposed portion of the thin alumina film by an ion beam etching technique using a carbon fluoride gas, wherein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600V;
• and
• (d) removing an exposed portion of the upper permalloy film by an ion beam etching technique using argon, while using said thin alumina film as a mask.

A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of:

• (a) forming a thin alumina film on the desired surface including on the uneven portion;
• (b) forming a thin metal film on the thin alumina film, including on the uneven portion;
• (c) forming a photoresist film of a predetermined pattern on the thin metal film, including on the uneven portion;
• (d) removing an exposed portion of the thin metal film, thereby exposing a portion of the thin alumina film;
• and
• (e) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said thin metal film as a mask, with an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas being equal to or greater than 600V.