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US 4,584,594 AGranted
Logic structure utilizing polycrystalline silicon Schottky diodes
AssigneeFairchild Camera and Instrument Corporation
InventorsMadhukar B. Vora, Hemraj K. Hingarh
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Abstract
An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.
Claims10
An integrated circuit structure comprising:
- a semiconductor body having an upper surface;
- a transistor fabricated in the body, the transistor including a first electrode and a second electrode each adjacent the upper surface;
- a surrounding region of insulating material inset into the body around the transistor;
- an electrically conductive layer of a metal silicide disposed on the surrounding region but not in contact with either the first or the second electrodes;
- a first region of polycrystalline silicon disposed on the electrically conductive layer;
- a second region of polycrystalline silicon disposed across the body and the surrounding region, a first part of the second region being disposed on the first region and a second part of the second region being disposed on the first electrode, the second part being doped to electrically connect the first electrode to the electrically conductive layer;
- and
- at least one metal electrode disposed on the first part of the second region.
5 more elements
Dependencies are inferred from the claim text.