Induction heated reactor system for chemical vapor deposition

In a chemical vapor deposition system, in combination:

• a generally cylindrical reaction chamber having walls formed from a dielectric material and being disposed with its central axis in a vertical orientation;
• a susceptor formed from an electrically conductive material adapted to be heated by induction, said susceptor comprising a hollow body having a generally truncated pyramidal configuration and adapted to be positioned within said reaction chamber with its central axis disposed in a vertical orientation, said body having an arrangement of substantially straight side wall segments meeting at corner regions and including an array of wafer carrying recesses formed on front surface regions thereof in multiple rows such that said wafers face the cylindrical side walls of said reaction chamber;
• a heating system for heating said susceptor by induction and comprising a coil having a generally cylindrical configuration disposed over said second chamber and having a height greater than the height of said susceptor, and power supply means for supplying an alternating current to said coil for induction heating of said susceptor;
• gas delivery means for delivering reactant gases to said reaction chamber in a region above said susceptor and for withdrawing reactant gases from said reaction chamber below said susceptor;
• and
• boundary control means carried on said susceptor at prearranged locations relative to said wafer carrying recesses to locally alter the boundary conditions between said reactant gases and the surfaces of said susceptor and wafers carried thereon and thereby to provide more uniform deposition of material on said wafers.