Polymeric boron nitrogen dopant

A method of applying a polymeric composition to semiconductor substrates comprising dispensing a polymer containing from 1 to 20 percent by weight in a volatile organic solvent of a homogeneous glassy polymer at least a substantial part of the backbone of which is selected from:

• (a) polymers with borazine rings linked directly between a boron in one ring and a nitrogen atom in the adjacent ring of the formula ##STR6## and (b) polymers with borazine rings linked via other groups Z of the formula ##STR7## wherein X and Y locate the substituents on the ring boron and nitrogen atoms and Z is selected from the group consisting of --N(R)--, --O--, --N(R)--R.sup.1 --N(R)--, and --R--, wherein R and R.sup.1 denote organic radicals of 1 to 10 carbon atoms and X and Y are radicals selected from the group consisting of hydrogen, alkyl radicals of 1-8 carbon atoms, unsubstituted aromatic, alkyl halogen, hydroxy and amino substituted aromatics, heterocyclic aromatics, 1-6 carbon alkyl substituted heterocyclic aromatic, amino, alkoxy and halogen radicals;
• rotating the wafer at 2,000-10,000 rpm, to produce a thin film, of the order of 100-7000 .ANG. of the polymer on the substrate;
• heating the treated wafer in a diffusion furnace for 0.5-2.0 hours at 850.degree. C.-1100.degree. C. in a nitrogen ambient;
• deglazing the heated substrate in HF;
• and heating the substrate at elevated temperature of 1050.degree. C.-1200.degree. C. for 1-2 hours under an atmosphere selected from oxygen, wet oxygen and nitrogen ambients and combinations thereof.