Electrophotographic photosensitive member and method for making such a member containing amorphous silicon

A method of manufacturing an electrophotographic photosensitive member, comprising the following steps:

• preparing a conductive substrate, forming a first layer structure including a single photoconducting layer made mainly of amorphous silicon on said substrate and forming a second photosensitive or photoconducting layer structure including a plurality of individual layers each made mainly of amorphous silicon on said single photoconducting layer, said step of forming said second photosensitive or photoconductive layer structure comprising forming a first high resistance layer having a relatively higher resistance value, forming, on said first high resistance layer, a low resistance layer having a relatively lower resistance value than said relatively higher resistance value, and forming a further high resistance layer on said low resistance layer, said further high resistance layer having a relatively higher resistance value than said relatively lower resistance value, whereby said low resistance layer is sandwiched between said high resistance layers so that the first and last layers of said second layer structure are said high resistance layers, and whereby the resistance in the surface of said second layer structure is increased and the resistance in the cross-direction of said second layer structure is decreased.