Back to results
US 4,565,584 AGranted
Method of producing single crystal film utilizing a two-step heat treatment
AssigneeHitachi, Ltd.
InventorsMasao Tamura, Makoto Ohkura, Masanobu Miyao, Nobuyoshi Natsuaki, Naotsugu Yoshihiro, Takashi Tokuyama, Hiroshi Ishihara
Life of this patent
Estimating the term…
Abstract
An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
Claims8
A method of producing a single crystal film, comprising:
- (1) the step of depositing an insulating film which has a desired plane shape, on a surface of a single crystal substrate,
- (2) the step of depositing an amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of said single crystal substrate and said insulating film, and
- (3) the step of turning said amorphous or polycrystalline film into a single crystal by solid phase epitaxial growth, said step of turning including a first heat treatment, at a temperature of not lower than approximately 200.degree. C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500.degree.-1000.degree. C., which is conducted in a non-oxidizing atmosphere.
A method of producing a single crystal film, comprising:
- (1) the step of depositing an insulating film which has a desired plane shape, on a surface of a single crystal substrate,
- (2) the step of depositing an amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of said single crystal substrate and said insulating film, and
- (3) the step of turning said amorphous or polycrystalline film into a single crystal by solid phase epitaxial growth, said step of turning including a first heat treatment, at a temperature of not lower than approximately 200.degree. C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500.degree.-1200.degree. C., which is conducted in a non-oxidizing atmosphere.
Dependencies are inferred from the claim text.